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FQP50N06

60VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

TGS

Tiger Electronic Co.,Ltd

FQP50N06

50A,60VHeatsinkPlanarN-ChannelPowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

FQP50N06

50A,60VHeatsinkPlanarN-ChannelPowerMOSFET

GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

FQP50N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.022Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQP50N06L

60VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF50N06

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?32.6A,60V,RDS(on)=0.021?@VGS=10V ?Lowgatecharge(typical24.5nC) ?LowCrss(typical90pF) ?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF50N06

60VN-ChannelMOSFET

DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

TGS

Tiger Electronic Co.,Ltd

FQPF50N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF50N06

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Veryhighcommutationruggedness ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz ?APPLICATIONS ?PFCstages ?LCD&PDPTV ?Powersupply ?Switch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQPF50N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?32.6A,60V,RDS(on)=0.021?@VGS=10V ?Lowgatecharge(typical24.5nC) ?LowCrss(typical90pF) ?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB50N06LTM

  • 功能描述：

    MOSFET 60V N-Channel QFET Logic Level

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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onsemi(安森美)
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TO-263-3
8357
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ON(安森美)
23+
TO-263-3
11952
公司只做原裝正品,假一賠十
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ON/安森美
24+
TO-263
505348
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ON(安森美)
2511
TO-263-3
9550
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
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FAIRCHILD
05+
原廠原裝
8216
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ONSemiconductor
24+
NA
3620
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FSC
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NA
9852
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FAIRCHIL
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TO-263
90000
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三年內(nèi)
1983
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FSC/ON
23+
原包裝原封 □□
586
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