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FQPF13N50CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQPF13N50CSDTU

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF13N50CT

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF13N50T

N-ChannelQFETMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GPT13N50

POWERFIELDEFFECTTRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy

GREATPOWERGreatpower Microelectronic Corp.

冠順微電子深圳冠順微電子有限公司

GPT13N50D

POWERFIELDEFFECTTRANSISTOR

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedtermination schemetoprovideenhancedvoltage-blockingcapability withoutdegradingperformanceovertime.Inaddition,this advancedMOSFETisdesignedtowithstandhighenergyin avalancheandcommutationmodes.Thenewenergy

GREATPOWERGreatpower Microelectronic Corp.

冠順微電子深圳冠順微電子有限公司

HFP13N50

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFP13N50S

500VN-ChannelMOSFET

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:38nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP13N50U

SuperiorAvalancheRuggedTechnology

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:34nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.39Ω(Typ.)@vGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFS13N50S

500VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

詳細參數(shù)

  • 型號：

    FQB13N50CTM

  • 功能描述：

    MOSFET 500V N-Channel Adv Q-FET C-Series

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
24+
TO-263
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FSC
17+
TO-263
6200
詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
FAI
25+23+
TO263
73155
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
FAIRCHIL
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
FSC/ON
23+
原包裝原封 □□
10225
原裝進口特價供應(yīng) 特價，原裝元器件供應(yīng)，支持開發(fā)樣品 更多詳細咨詢 庫存
 詢價
FAIRCHILD/仙童
2447
SOT263
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
FAIRCHILD/仙童
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
FAIRCILD
22+
TO-263
8000
原裝正品支持實單
 詢價
更多FQB13N50CTM供應(yīng)商 更新時間2025-7-28 13:44:00

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