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FQA7N80C

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N80C

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA7N80C

800VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQAF7N80

800VN-ChannelMOSFET

800VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB7N80

800VN-ChannelMOSFET

Features ?6.6A,800V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical40nC) ?LowCrss(typical19pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI7N80

800VN-ChannelMOSFET

Features ?6.6A,800V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical40nC) ?LowCrss(typical19pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI7N80

800VN-ChannelMOSFET

Features ?6.6A,800V,RDS(on)=1.5?@VGS=10V ?Lowgatecharge(typical40nC) ?LowCrss(typical19pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP7N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP7N80C

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP7N80C

6.6A,800VHeatsinkPlanarN-ChannelPowerMOSFET

GeneralDescription planarstripe,DMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,havealowgatechargewithsuperiorswitchingperformance,andruggedavalanchecharacteristics.ThisPowerMOSFETiswellsuitedforsynchronousDC-DCConvert

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

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