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FQU2N60CTU

Marking：FQU2N60C；Package：I-PAK；N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietaryplanar stripeandDMOStechnology.ThisadvancedMOSFET technologyhasbeenespeciallytailoredtoreduceon-state resistance,andtoprovidesuperiorswitchingperformance andhighaval

FQU5N50CTU-WS

Marking：FQU5N50CS；Package：I-PAK；N-Channel QFET? MOSFET 500 V, 4.0 A, 1.4 ?

Features ?4.0A,500V,RDS(on)=1.4Ω@VGS=10V ?LowGateCharge(Typ.18nC) ?LowCrss(Typ.15pF) ?FastSwitching ?100%AvalancheTested ?Improveddv/dtCapability Description ThisN-ChannelenhancementmodepowerMOSFETis producedusingONSemiconductor’sproprietary

MAX6314US31D4-T

Marking：FQ**；Package：SOT-143；68HC11/Bidirectional-Compatible 關(guān)P Reset Circuit

GeneralDescription TheMAX6314low-powerCMOSmicroprocessor(μP)supervisorycircuitisdesignedtomonitorpowersuppliesinμPanddigitalsystems.TheMAX6314’sRESEToutputisbidirectional,allowingittobedirectlyconnectedtoμPswithbidirectionalresetinputs,suchasthe68HC11.I

SM6T68AY

Marking：FQY；Package：SMB；Automotive 600 W Transil

Description TheSM6TYTransilserieshasbeendesignedtoprotectsensitiveautomotivecircuitsagainstsurgesdefinedinISO7637-2andagainstelectrostaticdischargesaccordingtoIEC61000-4-2andISO10605.Theplanartechnologymakesthisdevicecompatiblewithhigh-endcircuitswherelowl

MIC2017YM6-TR

Marking：FQAA；Package：SOT-23；Fixed and Adjustable Current Limiting Power Distribution Switches

TPS62901RPJR

Marking：FQ8；Package：VQFN-HR；TPS62901, 3-V to 17-V, High Efficiency and Low IQ Buck Converter in 1.5-mm ? 2-mm QFN Package