描述 Description

EconoPIM??2 650V three phase PIM IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC

特性 Features

? Increased blocking voltage capability to 650V
? High Short Circuit Capability, Self Limiting Short Circuit Current
? T(vj op) = 150°C
? V (CEsat) with positive Temperature Coefficient
? Integrated NTC temperature sensor
? Isolated Base Plate
? Copper Base Plate
? Solder Contact Technology

優(yōu)勢:
? Compact module concept
? Optimized customer’s development cycle time and cost
? Configuration flexibility

簡介

FP50R07N2E4屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的FP50R07N2E4晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對稱式橋； 升壓、降壓和制動斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。