訂購數量 | 價格 |
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首頁>FP25R12W2T4>詳情
FP25R12W2T4_INFINEON/英飛凌_IGBT 模塊 N-CH 1.2KV 39A浙江永芯
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
FP25R12W2T4
- 功能描述:
IGBT 模塊 N-CH 1.2KV 39A
- RoHS:
否
- 制造商:
Infineon Technologies
- 產品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應商
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