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FP2189-G

1 - Watt HFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

FP2189-G

1-Watt HFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

FP2189-G

1 watt HFET; ·? 50 –4000 MHz\n·? +30 dBm P1dB\n·? +43 dBm Output IP3\n·? High Drain Efficiency\n·? 18.5 dB Gain @ 900 MHz\n·? Lead-free/Green/RoHS compliant SOT-89 Package\n·? MTTF 100 YearsApplications\n·? Mobile Infrastructure\n·? CATV / DBS\n·? W-LAN / ISM\n·? RFID\n·? Defense / Homeland Security\n·? Fixed Wireless;

Product Description\nThe FP2189 is a high performance? 1- Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1 -dB compression, while providing 18.5 dB gain at 900 MHz.Product

Qorvo

FP2189-RFID

1-WattHFET

ProductDescription TheFP2189isahighperformance1-WattHFET(HeterostructureFET)inalow-costSOT-89surfacemountpackage.Thisdeviceworksoptimallyatadrainbiasof+8Vand250mAtoachieve+43dBmoutputIP3performanceandanoutputpowerof+30dBmat1-dBcompression,whileprov

HAT2189WP

SiliconNChannelPowerMOSFETPowerSwitching

HAT2189WP

SiliconNChannelPowerMOSFETPowerSwitching

HAT2189WP-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

HAT2189WP-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

ME2189series

NJM2189

SRSA/VFocusSPEAKERELEVATIONAUDIOPROCESSOR

■GENERALDESCRIPTION TheNJM2184/NJM2189areSpeakerElevationAudioProcessorsbasedontheSRSFOCUStechnology.Theyarecapableofraisingstereoimage. Inaddition,theNJM2184/2189includeA/VFOCUSFilterstoreduceharshsoundwhenthespeakersaredirectlyputonahard-surfacefloor.