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FOD3182SDV中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FOD3182SDV
廠商型號(hào)

FOD3182SDV

功能描述

3A Output Current, High Speed MOSFET Gate Driver Optocoupler

文件大小

654.84 Kbytes

頁(yè)面數(shù)量

23 頁(yè)

生產(chǎn)廠商

FAIRCHILD Fairchild Semiconductor

中文名稱

仙童半導(dǎo)體 飛兆/仙童半導(dǎo)體公司

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-31 11:10:00

人工找貨

FOD3182SDV價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

FOD3182SDV規(guī)格書詳情

描述 Description

The FOD3182 is a 3A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters.

特性 Features

■High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM= 2,000V

■Guaranteed operating temperature range of -40°C to +100°C

■3A peak output current

■Fast switching speed

–210ns max. propagation delay

–65ns max pulse width distortion

■Fast output rise/fall time

–Offers lower dynamic power dissipation

■250kHz maximum switching speed

■Wide VDDoperating range: 10V to 30V

■Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)

■5000Vrms, 1 minute isolation

■Under voltage lockout protection (UVLO) with hysteresis – optimized for driving MOSFETs

■Minimum creepage distance of 8.0mm

■Minimum clearance distance of 10mm to 16mm (option TV or TSV)

■Minimum insulation thickness of 0.5mm

■UL and VDE*

■1,414 peak working insulation voltage (VIORM)

Applications

■Plasma Display Panel

■High performance DC/DC convertor

■High performance switch mode power supply

■High performance uninterruptible power supply

■Isolated Power MOSFET gate drive

產(chǎn)品屬性

  • 型號(hào):

    FOD3182SDV

  • 功能描述:

    高速光耦合器 High Speed 3A OUT MOSFET Gate Driver

  • RoHS:

  • 制造商:

    Avago Technologies

  • 最大正向二極管電壓:

    1.75 V

  • 最大反向二極管電壓:

    5 V

  • 最大功率耗散:

    40 mW

  • 最大工作溫度:

    +125 C

  • 最小工作溫度:

    - 40 C

  • 封裝/箱體:

    SOIC-5

  • 封裝:

    Tube

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