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FMA219

X-Band LNA MMIC; ? 0 GHz to 11.0 GHz Operating Bandwidth\n? 3 dB Noise Figure\n? 21 dB Small-Signal Gain\n? 14 dBm Output Power\n? +3 V Single Bias Supply\n? DC-Decoupled Input and Output Ports\n;

The FMA219 is a two-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0GHz to 11.0GHz. The amplifier requires a single +3V supply and one off-chip component for supply decoupling. Both the input and output ports are DC decoupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required.

FMA219

X-BAND LNA MMIC

GENERALDESCRIPTION: TheFMA219isa2-stage,reactivelymatchedpHEMTlow-noiseMMICamplifierdesignedforuseover7.0to11.0GHz.Theamplifierrequiresasingle+3Vsupplyandoneoff-chipcomponentforsupplyde-coupling.BoththeinputandoutputportsareDCde-coupled.Groundingofthe

FMA219

X-BAND LNA MMIC

FMA219_1

X-BAND LNA MMIC

FPM-219

12XGA/15XGA/17SXGA/19SXGAIndustrialMonitorswithResistiveTouchControl,DirectHDMI,DP,andVGAPorts

G219

Ultra320Multi-modeLVD/SESCSITerminator

[GMT] GeneralDescription TheG219Multi-modeLVD/SESCSIterminatorprovidesasmoothtransitionintothenextgenerationoftheSCSIParallelInterface(SPI-4).Itautomaticallysensesthebus,viaDIFFSENS,andswitchestheterminationtoeithersingle-ended(SE)orlowvoltagediffere

GCM219

ChipMonolithicCeramicCapacitorsforAutomotive

GCMSeries Features Thisproductcanbeusedforsafetydevices,suchasthedrivesystemcontrolforengineECU,airbags,andABS.Thisproducthasclearedtestconditionsmoreseverethanthatofgeneralproducts(GRMSeries)evenintemperaturecycleandhumidityloadtests. 1.Id

GQM219

ApplicationSpecificCapacitorsHighFrequencyCeramicCapacitors??GQMSeries

ChipMonolithicCeramicCapacitors HighFrequencyGQMSeries ■Features 1.HiQandlowESRatVHF,UHF,Microwave 2.Featureimprovement,lowpowerconsumptionfor mobiletelecommunication.(Basestation,terminal, etc.) ■Applications Highfrequencycircuit(Mobiletelecommunicat

GRM219

HighDielectricConstantType6.3/16/25/50V

GRM219

ChipMonolithicCeramicCapacitors