描述 Description

The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

特性 Features

128K bit Ferroelectric Nonvolatile RAM

? Organized as 16,384 x 8 bits

? High Endurance 100 Trillion (1014) Read/Writes

? 10 Year Data Retention

? NoDelay? Writes

? Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

? Up to 40 MHz Frequency

? Direct Hardware Replacement for Serial Flash

? SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

? Hardware Protection

? Software Protection

Device ID

? Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

? Low Voltage Operation 2.0V – 3.6V

? Active Current 120 μA (typ. @ 1MHz)

? Standby Current 90 μA (typ.)

? Sleep Mode Current 5 μA (typ.)

Industry Standard Configurations

? Industrial Temperature -40 °C to +85 °C

? 8-pin “Green”/RoHS SOIC Package