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FIR60N20PG

絲?。?a target="_blank" title="Marking" href="/fir60n20p/marking.html">FIR60N20P；Package：TO-220AB；N-Channel Enhancement Mode Power Mosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR60N20PG

功率MOS/中低壓功率MOS;

FirstFirst Silicon Co., Ltd

福斯特

HM60N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM60N20D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFC60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC60N20

HiPerFETMOSFETISOPLUS220TM

HiPerFET?MOSFETISOPLUS220? ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintot

IXYS

IXYS Corporation

IXFH60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesav

IXYS

IXYS Corporation

IXFH60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH60N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH60N20F

HiPerRFTMPowerMOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

技術(shù)參數(shù)

  • ID [A]：

    60

  • VGS [±V]：

    ±20

  • VGS(th) [V]：

    2~4

  • RDS(on) [MΩ]：

    32

  • Package：

    TO-220

供應(yīng)商型號品牌批號封裝庫存備注價格
FIRST EUROPE
23+
SMD
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
FIRST EUROPE
24+
N/A
152440
原裝原裝原裝
 詢價
First
TO-252
22+
6000
十年配單,只做原裝
 詢價
FIRST/福斯特
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FIRST/福斯特
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
First
25+
TO-252
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
FS/福順
2450+
TO252
6540
原裝現(xiàn)貨或訂發(fā)貨1-2周
 詢價
FIRST/福斯特
23+
TO251
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FIRST
23+
SOT252
246
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FIRST
21+
SOT252
246
原裝現(xiàn)貨假一賠十
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更多FIR60N20PG供應(yīng)商 更新時間2025-7-30 9:07:00

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