描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and
higher reliability compared to Silicon. No reverse recovery
current, temperature independent switching characteristics, and
excellent thermal performance sets Silicon Carbide as the next
generation of power semiconductor. System benefits include
highest efficiency, faster operating frequency, increased power
density, reduced EMI, and reduced system size & cost

特性 Features

? Max Junction Temperature 175C
? Avalanche Rated 49 mJ
? High Surge Current Capacity
? Positive Temperature Coefficient
? Ease of Paralleling
? No Reverse Recovery / No Forward Recovery
? AEC-Q101 Qualified and PPAP Capable

應(yīng)用 Application

? Automotive HEV-EV Onboard Chargers
? Automotive HEV-EV DC-DC Converters

簡介

FFSP1065B-F085屬于分立半導(dǎo)體產(chǎn)品的二極管-整流器-單。由制造生產(chǎn)的FFSP1065B-F085二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。