首頁>FFSD0665B-F085_V01>規(guī)格書詳情
FFSD0665B-F085_V01中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
FFSD0665B-F085_V01 |
| 功能描述 | Silicon Carbide Schottky Diode 650 V, 6 A |
| 文件大小 |
373.57 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | ONSEMI |
| 中文名稱 | 安森美半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-11 11:09:00 |
| 人工找貨 | FFSD0665B-F085_V01價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書
更多FFSD0665B-F085_V01規(guī)格書詳情
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
特性 Features
? Max Junction Temperature 175°C
? Avalanche Rated 24.5 mJ
? High Surge Current Capacity
? Positive Temperature Coefficient
? Ease of Paralleling
? No Reverse Recovery / No Forward Recovery
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
? Automotive HEV?EV Onboard Chargers
? Automotive HEV?EV DC?DC Converters
