FDV303N中文資料翊歐數(shù)據(jù)手冊PDF規(guī)格書
FDV303N規(guī)格書詳情
General Description
This very high density process is tailored to minimize on-state
resistance at low gate drive conditions. This device is designed
especially for application in battery circuits using either one
lithium or three cadmium or NMH cells. It can be used as an inverter
or for high-efficiency miniature discrete DC/DC
conversion in compact portable electronic devices like cellular
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts.
特性 Features
VDS (V) = 25V
ID= 2A
RDS(ON)< 28m? (VGS = 4.5V)
RDS(ON)< 42m? (VGS= 2.7V)
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1V.
Gate-Source Zener for ESD ruggedness.>6kV
Human Body Model
Compact industry standard SOT-23 surface mount package.
產(chǎn)品屬性
- 型號：
FDV303N
- 功能描述：
MOSFET N-Ch Digital
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOT23-3 |
20000 |
詢價 | |||
FAI |
21+ |
12588 |
SOT23-3 |
詢價 | |||
ONSEMI |
兩年內(nèi) |
N/A |
1809 |
原裝現(xiàn)貨,實單價格可談 |
詢價 | ||
ON/安森美 |
24+ |
SOT-23(SOT-23-3) |
30000 |
原裝正品公司現(xiàn)貨,假一賠十! |
詢價 | ||
FAIRCHILD |
23+ |
SOT23 |
9526 |
詢價 | |||
Fairchild |
24+ |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | |||
FSC |
2018+ |
SOT23 |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | ||
FAIRCHILD |
20+ |
SOT23 |
11520 |
特價全新原裝公司現(xiàn)貨 |
詢價 | ||
fairchil |
24+ |
SOT23-3 |
2650 |
原裝優(yōu)勢!絕對公司現(xiàn)貨 |
詢價 | ||
UMW 友臺 |
23+ |
SOT-23 |
30000 |
原裝正品，實單請聯(lián)系 |
詢價 |
