最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

FDMA6676PZ

單 P 溝道，PowerTrench? MOSFET，-30V，-11A，13.5mΩ; ? 最大值 rDS(on) = 13.5 mΩ @ VGS = -10 V\n? 25V VGS 擴展運行額定值\n? 30V VDS 阻塞\n? 2x2mm 外形尺寸\n? 薄型 - 0.8 mm 最大值\n? 集成保護二極管\n? 符合 RoHS 標準\n? 無鹵素\n;

此設(shè)備是超低電阻的 P 溝道 FET。 它專為電源線負載開關(guān)應(yīng)用和反接保護而設(shè)計。 它專為爬高至 25V 的電壓軌優(yōu)化。 典型的終端系統(tǒng)包括筆記本電腦、平板電腦和手機。 應(yīng)用包括電池保護、輸入電力線路保護和充電路徑保護，其中包括 USB 和其他充電路徑。 FDMA6676PZ 具有 25V 的增強 VGS 額定值，專門用于簡化安裝。 當用作反極性保護，并將柵極接地且漏極連接到 V 輸入時，它專門用來支持操作輸入電壓，可高達 25 V，而無需在柵極上進行外部齊納保護。 其較小的 2x2x0.8 外形尺寸使其成為移動和空間受限應(yīng)用的理想選擇。

FDMA6676PZ

絲?。?a target="_blank" title="Marking" href="/676/marking.html">676；Package：WDFN-6；MOSFET ??Single, P-Channel, POWERTRENCH

FDMC6676BZ

FDP6676

30VN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“l(fā)owside”synchronousrectifieroperation,providinganextremelylowRDS(O

FDP6676

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=84A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

FDP6676S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=76A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FDP6676S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP/B6676SincludesanintegratedSchottky

FDS6676

30VN-ChannelPowerTrenchMOSFET

FDS6676

30VN-ChannelMOSFET

Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(45nCtypical) ?Highperformancetrenchtechnologyfor extremelylowRDS(ON)andfastswitching ?Highpowerandcurrenthandlingcapability RoHSCompliant (VGS=10V) VDS(V)=30V ID=13A RDS(ON)

FDS6676AS

30VN-ChannelMOSFET

Features ?IncludesSyncFETSchottkybodydiode ?Lowgatecharge(45nCtypical) ?Highperformancetrenchtechnologyfor extremelylowRDS(ON)andfastswitching ?Highpowerandcurrenthandlingcapability RoHSCompliant (VGS=10V) VDS(V)=30V ID=13A RDS(ON)