首頁>FDMA1023PZ>規(guī)格書詳情
FDMA1023PZ中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
FDMA1023PZ規(guī)格書詳情
General Description
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
特性 Features
■ Max rDS(on) = 72m? at VGS = –4.5V, ID = –3.7A
■ Max rDS(on) = 95m? at VGS = –2.5V, ID = –3.2A
■ Max rDS(on) = 130m? at VGS = –1.8V, ID = –2.0A
■ Max rDS(on) = 195m? at VGS = –1.5V, ID = –1.0A
■ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
■ HBM ESD protection level > 2kV typical (Note 3)
■ RoHS Compliant
產(chǎn)品屬性
- 型號:
FDMA1023PZ
- 功能描述:
MOSFET -20V Dual P-Ch PowerTrench MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
19+ |
NA |
27000 |
詢價 | |||
ONSEMI/安森美 |
25+ |
QFN |
32360 |
ONSEMI/安森美全新特價FDMA1023PZ即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
VDFN |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
6545 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
QFN |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
FAIRCHILD |
17+ |
QFN6 |
2002 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
FSC |
24+ |
QFN6 |
5645 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
FAIRCHILD |
2016+ |
QFN |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FAIRCHI |
2020+ |
DFN8 |
5485 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |