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FDC642P

P-Channel 2.5V Specified PowerTrench??OSFET

P-Channel2.5VSpecifiedPowerTrench?MOSFET

FDC642P

P 溝道，PowerTrench? MOSFET，2.5V 指定，-20 V，-4.0 A，65mΩ; ?VGS = -4.5V，ID = -4.0A時，最大rDS(on) = 65mΩ\n?VGS = -2.5V，ID = -3.2A時，最大rDS(on) = 100mΩ\n?快速開關(guān)速度。\n?低柵極電荷（典型值11nC）。\n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(ON)。\n?SuperSOT?-6封裝： 小尺寸（比標(biāo)準(zhǔn)SO-8封裝小72%）；薄型（1mm厚）\n?終端無引線且符合RoHS標(biāo)準(zhǔn)\n;

此N溝道2.5V額定MOSFET采用飛兆半導(dǎo)體先進的PowerTrench工藝生產(chǎn)，這一先進工藝是專為最大程度地降低通態(tài)電阻并保持低柵極電荷以獲得卓越開關(guān)性能而定制的。 這些器件經(jīng)過專門設(shè)計，能以極小的尺寸提供出色的功耗，適合那些不宜采用更大封裝的應(yīng)用。

FDC642P_09

P-Channel PowerTrench? MOSFET -20V, -4A, 100m廓

Features ■TyprDS(on)=52.5m?atVGS=-4.5V,ID=-4A ■TyprDS(on)=75.3m?atVGS=-2.5V,ID=-3.2A ■Fastswitchingspeed ■Lowgatecharge(6.9nCtypical) ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■SuperSOTTM-6package:smallfootprint(72smallerthanstandardSO

FDC642P_F085

FDC642P P-Channel 2.5V specified PowerTrench MOSFET

Features ■TyprDS(on)=52.5m?atVGS=-4.5V,ID=-4A ■TyprDS(on)=75.3m?atVGS=-2.5V,ID=-3.2A ■Fastswitchingspeed ■Lowgatecharge(6.9nCtypical) ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■SuperSOTTM-6package:smallfootprint(72smallerthanstandardSO

FDC642P_F085

P 溝道，PowerTrench? MOSFET，-20V，-4A，100mΩ; ?典型 rDS(on) = 52.5 m? （VGS = –4.5 V、ID = –4A）\n?典型 rDS(on) = 75.3 m? （VGS = –2.5 V、ID = –3.2 A）\n?快速開關(guān)速度\n?低柵極電荷（6.9nC典型值）\n?高性能溝道技術(shù)可實現(xiàn)極低的rDS(on)\n?SuperSOTT–封裝：小尺寸（比標(biāo)準(zhǔn) SO-8 小 72%）；超?。? mm 厚）。\n?符合 RoHS 標(biāo)準(zhǔn)\n?符合 AEC Q101\n;

P-Channel PowerTrench? MOSFET, -20V, -4A, 100mΩ

FDC642P-F085

絲?。?strong>FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ?TypRDS(on)=52.5matVGS=?4.5V,ID=?4A ?TypRDS(on)=75.3matVGS=?2.5V,ID=?3.2A ?FastSwitchingSpeed ?LowGateCharge(6.9nCTypical) ?HighPerformanceTrenchTechnologyforExtremelyLowRDS(on) ?SUPERSOT?6Package:SmallFootprint(72Smallerthan S

FDC642P-F085P

絲印：FDC642P；Package：SSOT-6；MOSFET ??P-Channel, POWERTRENCH -20 V, -4 A, 100 m

Features ?TypRDS(on)=52.5matVGS=?4.5V,ID=?4A ?TypRDS(on)=75.3matVGS=?2.5V,ID=?3.2A ?FastSwitchingSpeed ?LowGateCharge(6.9nCTypical) ?HighPerformanceTrenchTechnologyforExtremelyLowRDS(on) ?SUPERSOT?6Package:SmallFootprint(72Smallerthan S