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FDD8880

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=58A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD8880

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FDD8880

N-channelEnhancementModePowerMOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD8880

30VN-ChannelMOSFET

Features Highperformancetrenchtechnologyforextremelylow RDS(ON) Lowgatecharge Highpowerandcurrenthandlingcapability VDS=30V RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDD8880

N-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD8880

N-ChannelPowerTrench?MOSFET30V,58A,9m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMS8880

N-ChannelPowerTrench?MOSFET30V,21A,8.5m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8880

N-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowrDS(ON)andfastswitchingspeed. Features ■rDS(ON)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP8880

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDS8880

Dual3A,20VSynchronousStep-DownRegulatorwithIntegratedHigh-SideMOSFET

GENERALDESCRIPTION TheADP2323isafullfeatured,dualoutput,step-downdc-to-dcregulatorbasedoncurrent-modearchitecture.TheADP2323integratestwohigh-sidepowerMOSFETsandtwolow-sidedriversfortheexternalN-channelMOSFETs.Thetwopulse-widthmodulation(PWM)channelscanbec

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

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