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FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features ●-16A,-20V. RDS(on)=0.08ù@VGS=-4.5V RDS(on)=0.11ù@VGS=-2.5V. ●CriticalDCelectricalparametersspecifiedatelevatedtemperature. ●HighdensitycelldesignforextremelylowRDS(on).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-ChannellowthresholdMOSFEThasbeendesignedforuseasalinearpasselementforlowvoltageoutputs.Inaddition,thepartmaybeusedasalowvoltageloadswitchwhenswitchingoutputsonoroffforpowermanagement.ThepartmayalsobeusedinconjunctionwithDC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB4020P

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4020

P-Channel2.5VSpecifiedEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannellowthresholdMOSFEThasbeendesignedforuseasalinearpasselementforlowvoltageoutputs.Inaddition,thepartmaybeusedasalowvoltageloadswitchwhenswitchingoutputsonoroffforpowermanagement.ThepartmayalsobeusedinconjunctionwithDC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4020P

P-Channel2.5VSpecifiedEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4020P

P-Channel2.5VSpecifiedEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannellowthresholdMOSFEThasbeendesignedforuseasalinearpasselementforlowvoltageoutputs.Inaddition,thepartmaybeusedasalowvoltageloadswitchwhenswitchingoutputsonoroffforpowermanagement.ThepartmayalsobeusedinconjunctionwithDC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4020P

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-16A@TC=25℃ ·DrainSourceVoltage- :VDSS=-20V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.08Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FPI4020

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS INTEGRALLYMOLDED HEATSINKS PROVIDEVERYLOW THERMALRESISTANCE

edi

Electronic devices inc.

FPI4020W

40/50AMPERESBRIDGERECTIFIERSWIRELEADSFORPCBOARDS

edi

Electronic devices inc.

G4020

UL94V-0PBTimpeller&frame

MECHATRONICS

Mechatronics, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    FDB4020P

  • 功能描述:

    MOSFET P-Ch Spec Enhance MODE FIELD EFFECT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多FDB4020P供應(yīng)商 更新時(shí)間2025-7-26 16:12:00