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FCPF190N60E-F154

絲印：FCPF190N60E；Package：TO-220F；MOSFET – N-Channel, SUPERFET II 600 V, 20.6 A, 190 m

Description SUPERFETIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thistechnologyistailoredtominimize conductionloss,providesuper

FCPF190N60E-F154

Power MOSFET, N-Channel, SUPERFET? II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead; ?Ultra low gate charge ( Typ. Qg = 63nC )\n? Lower switching loss\n?Low effective output capacitance ( Typ. Coss.eff = 178pF )\n? Lower switching loss\n?650V @TJ = 150°C\n?Max. RDS(on) = 190mΩ\n?100% avalanche tested\n;

SUPERFET II MOSFET is ON Semiconductor’s brand?new high?voltage super?junction (SJ) MOSFET family that is utilizing charge?balance technology for outstanding low on?resistance and lower gate?charge performance. This technology is tailored to minimize?conduction loss, provide superior switching performance, and?withstand extreme dv/dt rate and higher avalanche energy.Consequently, SUPERFET II MOSFET Easy drive series helps?manage EMI issues and allows for easier design implementation.