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FCPF11N60T

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FCPF11N60T

General Description

GeneralDescription SuperFET?is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos

FCPF11N60T

絲?。?strong>FCPF11N60T；Package：TO-220F；N-Channel SuperFET? MOSFET

GeneralDescription SuperFET?MOSFETisFairchildSemiconductor’sfirstgenera-tionofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconduction

FCPF11N60T

功率 MOSFET，N 溝道，SUPERFET?, Easy Drive，600 V，11 A，380 mΩ，TO-220F; ?650V @Tj = 150°C\n?典型值 Rds(on) = 0.32 Ω\n?超低柵極電荷（典型值 Qg=40nC)\n?低有效輸出電容（典型值 Coss.eff=95pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn);

SuperFET? MOSFET 是 Fairchild Semiconductor 的第一代高壓超結(jié) (SJ) MOSFET 系列，利用電荷平衡技術(shù)實(shí)現(xiàn)出色的低導(dǎo)通電阻，以及更低門極電荷方面的卓越性能。此技術(shù)專用于最大程度降低導(dǎo)電損耗，提供卓越的開關(guān)性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常適用于開關(guān)電源應(yīng)用，如 PFC、服務(wù)器/電信電源、FPD TV 電源、ATX 電源和工業(yè)電源應(yīng)用。

FMC11N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

FMC11N60E

N-CHANNELSILICONPOWERMOSFET

FMI11N60E

N-CHANNELSILICONPOWERMOSFET

FMP11N60E

N-CHANNELSILICONPOWERMOSFET

FMV11N60E

iscN-ChannelMOSFETTransistor

FMV11N60E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura