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FCP190N65S3

功率 MOSFET，N 溝道，SUPERFET? III，Easy Drive，650 V，17 A，190 mΩ，TO-220; ? 700 V @ TJ = 150 oC\n? Higher system reliability at low temperature operation\n? Ultra Low Gate Charge (Typ. Qg = 33 nC)\n? Lower switching loss\n? Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)\n? Lower switching loss\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n? Internal Gate resistance: 7.0 ohm\n? Lower peak Vds and lower Vgs oscillation\n? Typ. RDS(on) = 159 m?\n? 100% Avalanche Tested\n? RoHS Compliant\n;

SuperFET? III MOSFET is ON Semiconductor’s brand-new\nhigh voltage super-junction (SJ) MOSFET family that is utilizing\ncharge balance technology for outstanding low on-resistance\nand lower gate charge performance. This advanced technology\nis tailored to minimize conduction loss, provide superior\nswitching performance, and withstand extreme dv/dt rate.\nConsequently, SuperFET III MOSFET is very suitable for\nvarious power system for miniaturization and higher efficiency.

FCP190N65S3

N-Channel SuperFET MOSFET

FCP190N65S3

isc N-Channel MOSFET Transistor

NTB190N65S3HF

MOSFET??N??hannel,SUPERFETIII,FRFET650V,20A,190m

NTHL190N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,20A,190m

NTMT190N65S3H

MOSFET-Power,N??hannel,SUPERFETIII,FAST650V,190m,16A

NTMT190N65S3HF

MOSFET-Power,N-Channel,SUPERFETIII,FRFET

NTP190N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET

NTPF190N65S3H

MOSFET-Power,N??hannel,SUPERFETIII,FAST650V,190m,16A

NTPF190N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,20A,190m