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FCMT360N65S3

絲?。?strong>FCMT360N65S3；Package：PQFN8；MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m

GeneralDescription SuperFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionl

FCMT360N65S3

功率 MOSFET，N 溝道，SUPERFET? III，Easy Drive，650 V，10 A，360 mΩ，Power88; ? 700 V @ TJ = 150 oC\n? Higher system reliability at low temperature operation\n? Leadless Ultra-thin SMD package\n? High power density\n? Kelvin contact\n? Low gate noise and switching loss\n? Ultra Low Gate Charge (Typ. Qg = 18 nC)\n? Low switching loss\n? Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)\n? Low switching loss\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n? Typ. RDS(on) = 310 mΩ\n? 100% Avalanche Tested\n? RoHS Compliant\n? Moisture Sensitivity Level 1 guarantee\n? Internal Gate Resistance: 1 Ω\n;

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications.\nThe Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1(MSL 1).

NTD360N65S3H

MOSFET-Power,N??hannel,SUPERFETIII,FAST650V,360m,10A

NTPF360N65S3H

MOSFET-Power,N??hannel,SUPERFETIII,FAST650V,360m,10A

NVD360N65S3

MOSFET??Power,N-Channel,SUPERFETIII,EasyDrive650V,360m,10A

Features ?UltraLowGateCharge&LowEffectiveOutputCapacitance ?LowerFOM(RDS(on)max.xQgtyp.&RDS(on)max.xEOSS) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant