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FCMT080N65S3

Power MOSFET, N-Channel, SUPERFET? III, Easy Drive, 650 V, 38 A, 80 mΩ, Power88; ? 700V @ TJ = 150C\n? Higher system reliability at low temperature operation\n? Leadless Ultra-thin SMD package\n? High power density\n? Kelvin contact\n? Low gate noise and switching loss\n? Ulta Low Gate Charge (Typ. Qg = 71 nC)\n? Low switching loss\n? Low Effective Output Capacitance (Typ. Coss(eff.) = 570 pF)\n? Low switching loss\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n? Typ. RDS(on) = 70 mohm\n? 100% Avalanche Tested\n? RoHS Compliant\n? Moisture Sensitivity Level 1 guarantee\n? Internal Gate Resistance: 0.55 Ω\n;

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications.\nThe Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1(MSL 1).