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FCB110N65F

功率 MOSFET,N 溝道,SUPERFET? II,F(xiàn)RFET?,650 V,35 A,110 mΩ,D2-PAK; ?700 V @TJ= 150°C\n?典型值RDS(on)=96 mΩ(典型值)\n?超低柵極電荷(典型值Qg=98 nC)\n?低有效輸出電容(典型值Coss(eff.)= 464 pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標準\n;

SuperFET? II MOSFET 是飛兆利用電荷平衡技術(shù)實現(xiàn)出色的低導(dǎo)通電阻和更低柵極電荷性能的全新高壓超級結(jié) (SJ) MOSFET 系列產(chǎn)品。SuperFET? II FRFET? MOSFET 集更快速、更耐用的固有體二極管性能與快速開關(guān)性能于一身,旨在實現(xiàn)更佳可靠性和效率,在諧振開關(guān)應(yīng)用中尤其如此。SuperFET? II FRFET? 非常適合開關(guān)電源應(yīng)用,如服務(wù)器/電信電源、光伏逆變器、FPD 電視電源、電腦電源、照明及工業(yè)電源應(yīng)用。

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCB110N65F

絲印:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCH110N65F

N-ChannelSuperFET?IIFRFET?MOSFET

Description SuperFET?IIMOSFETisFairchildSemiconductor’sbrand-newhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,provides

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH110N65F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP110N65F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP110N65F

N-ChannelSuperFET?IIFRFET?MOSFET

Description SuperFET?IIMOSFETisFairchildSemiconductor’sbrand-newhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,provides

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXXN110N65C

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.35V@IC=110A ·HighCurrentHandlingCapability ·HighPowerDensity ·ShortCircuitCapabiltiy APPLICATIONS ·SynchronousRectificationinSMPS ·PowerInverters ·UPS,PFC ·HighFrequencyPowerInverters

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

TK110N65Z

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

技術(shù)參數(shù)

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    650

  • VGS Max (V):

    DC

  • VGS(th) Max (V):

    5

  • ID Max (A):

    35

  • PD Max (W):

    357

  • RDS(on) Max @ VGS = 10 V(mΩ):

    110

  • Qg Typ @ VGS = 10 V (nC):

    98

  • Ciss Typ (pF):

    3680

  • Package Type:

    D2PAK-3/TO-263-2

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO263
8950
BOM配單專家,發(fā)貨快,價格低
詢價
ONSEMI
NA
50
全新原裝!優(yōu)勢庫存熱賣中!
詢價
onsemi(安森美)
24+
TO-263AB
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ONSEMI/安森美
2410+
TO-263-3
80000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價
ON
23+
TO263
6850
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
FAIRCHILD
25+23+
TO263
7825
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
三年內(nèi)
1983
只做原裝正品
詢價
FAIRCHILD
24+
TO263
9860
原裝現(xiàn)貨/放心購買
詢價
ON(安森美)
2447
TO-263-2
115000
800個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
詢價
ON
1809+
TO-263
326
就找我吧!--邀您體驗愉快問購元件!
詢價
更多FCB110N65F供應(yīng)商 更新時間2025-7-29 16:36:00