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FAD8253

絲?。?a target="_blank" title="Marking" href="/fad8253mx/marking.html">FAD8253MX;Package:SOIC-14NB;Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf?bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh?voltageprocessandcommon?modenoisecancelingtechniquetoprovidestableoperationofhigh?sidedriverunderhighd

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FAD8253MX

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf?bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh?voltageprocessandcommon?modenoisecancelingtechniquetoprovidestableoperationofhigh?sidedriverunderhighd

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FAD8253MX

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink; ? Qualified to AEC Q100\n? PPAP capable\n? Floating channel for boostrap operation to +1200V\n? Allowable negative VS transient down to -15V at VBS=15V\n? Built-in common mode dV/dt noise canceling circuit\n? Separate power and signal ground for enhanced immunity against high dI/dt\n? Matched propagation delay \n? 3.3V and 5V input logic compatible\n? Built in shoot-through prevention logic with 120ns (typ) dead time\n? Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n? Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n? In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n? Peak Output current capability 2.5A Source 3.4A Sink\n;

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FAD8253MX-1

1200V Half-Bridge Gate Driver, 2.5 A Source/3.4 A Sink, SOIC-8 package; ? Qualified to AEC Q100\n? PPAP capable\n? Floating channel for boostrap operation to +1200V\n? Allowable negative VS transient down to -15V at VBS=15V\n? Built-in common mode dV/dt noise canceling circuit\n? Separate power and signal ground for enhanced immunity against high dI/dt\n? Matched propagation delay \n? 3.3V and 5V input logic compatible\n? Built in shoot-through prevention logic with 120ns (typ) dead time\n? Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n? Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n? In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n? Peak Output current capability 2.5A Source 3.4A Sink\n;

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FAD8253MX-1

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf?bridgegatedriverICdesigned fordrivinghighvoltage,highspeedandhighpowerIGBTsupto +1200V.TheFAD8253employsON’shigh?voltageprocessand common?modenoisecancelingtechniquetoprovidestableoperation ofhigh?sidedriverunderhi

ONSEMION Semiconductor

安森美半導體安森美半導體公司

FAD8253MX

Package:14-SOIC(0.154",3.90mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 柵極驅(qū)動器 描述:1200V 2.5A HALF-BRIDGE GATE DRIV

ONSEMION Semiconductor

安森美半導體安森美半導體公司

技術參數(shù)

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Power Switch:

    MOSFET/IGBT

  • Number of Outputs:

    2

  • Topology:

    Half-Bridge

  • Isolation Type:

    Junction Isolation

  • Vin Max (V):

    25.3

  • VCC Max (V):

    25

  • Drive Source/Sink Typ (mA):

    2500/2500

  • Rise Time (ns):

    25

  • Fall Time (ns):

    26

  • tp Max (ns):

    145

  • Package Type:

    SOIC-14

供應商型號品牌批號封裝庫存備注價格
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
詢價
ON
22+
NA
30000
原裝正品支持實單
詢價
onsemi(安森美)
24+
SOP14
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
詢價
ONN
2405+
原廠封裝
2130
只做原裝優(yōu)勢現(xiàn)貨庫存 渠道可追溯
詢價
ON
24+
SOIC-14
25000
ON全系列可訂貨
詢價
24+
N/A
79000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
onsemi
23+/24+
14-SOIC
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價
ONN
2324+
2130
原裝正品,超低價出售
詢價
onsemi(安森美)
2025+
SOIC-14
55740
詢價
ALCATEL
22+
DIP
5000
進口原裝!現(xiàn)貨庫存
詢價
更多FAD8253供應商 更新時間2025-7-28 15:01:00