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MMSZ5239B

Marking：F4；Package：SOD-123；ZENER DIODES

PlanarDieConstruction 500mWPowerDissipation 2.4V-75VStandoffVoltage 5%NominalZenerVoltage DesignedforSurfaceMountApplication PlasticMaterial-ULRecognitionFlammability Classification94V-O ThisisaHalogenFreeDevice AllSMCpartsaretraceabletothewaferlot Addit

MMSZ5239B

Marking：F4；Package：SOD-123；SOD-123 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage Generalpurpose,MediumCurrent 350mWPowerDissipationOnCeramicPBC IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5239BS

Marking：F4；Package：SOD-323；SOD-323 Plastic-Encapsulate Zener Diodes

Features PlanarDieConstruction Ultra-SmallSurfaceMountPackage 350mWPowerDissipationOnCeramicPBC Generalpurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses

MMSZ5239BS

Marking：F4；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–51VNominalZenerVoltage 5%StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

MMSZ5239BS

Marking：F4；Package：SOD-323；Silicon Planar Zener Diodes

Features Totalpowerdissipation:Max.500mW. Widezenerreversevoltagerange2.4Vto39V. Smallplasticpackagesuitableforsurfacemounteddesign. Toleranceapproximately±5

NC7SZ386L6X

Marking：F4；Package：MicroPak；TinyLogic UHS Three-Input Exclusive-OR Gate

Description TheNC7SZ386isasinglethree?inputExclusive?ORGatefrom onsemi’sUltra?HighSpeedSeriesofTinyLogic.Thedeviceis fabricatedwithadvancedCMOStechnologytoachieveultra?high speedwithhighoutputdrivewhilemaintaininglowstaticpower dissipationoverabroadVCCoper

NJU77241F3

Marking：F4；Package：SC-88A；Excellent EMI Immunity Rail-to-Rail Input, Open-Drain Output Low power CMOS Comparators

■FEATURES(V+=3V,V-=0V,Ta=25°C) ●Rail-to-RailInput ●Open-DrainOutput ●SupplyCurrent6μA/chtyp. ●PropagationDelay840nstyp. ●OperatingVoltage1.8to5.5V ●InputOffsetVoltage6mVmax. ●OperatingTemperature-40to125°C ●IntegratedEMIfilterEMIRR=62dBtyp.@f=900MHz ●Package

PBLS6004D

Marking：F4；Package：SC-74；60 V PNP BISS loadswitch

Features *LowVCEsat(BISS)transistorandresistor-equippedtransistorinonepackage *Lowthresholdvoltage(

PMEG4002EL

Marking：F4；Package：DFN1006-2；40 V, 0.2 A low Vf MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD882leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Forwardcurrent:

PMEG4002EL-Q

Marking：F4；Package：DFN1006-2；40 V, 0.2 A low Vf MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD882leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Forwardcurrent: