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GRF2012W

BROADBANDLINEARGAINBLOCK0.05to6GHz

FEATURES FlexibleBias InternallyMatchedto50Ω Process:GaAspHEMT Compact1.5x1.5mmDFN-6Package Reference:5V/90mA/0.9GHz Gain:14.8dB OIP3:40dBm OP1dB:23dBm EVBNoiseFigure:2.7dB Reference:8V/100mA/0.9GHz Gain:14.9dB OIP3:40dBm OP1dB:25dBm EVBN

GUERRILLA

Guerrilla RF, Inc.

GRF2012-W

BroadbandLinearGainBlock

GUERRILLA

Guerrilla RF, Inc.

GWX-2012

Competitivepricingforvolumeapplications

GOLLEDGE

Golledge Electronics Ltd

HAF2012

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2012L

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2012S

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCB2012

HighCurrentFerriteChipBead(LeadFree)

TAI-TECHTAI-TECH Advanced Electronics Co., Ltd.

西北臺慶科技西北臺慶科技股份有限公司

HCM2012G

(ChipCommonModeFilter)EngineeringSpecification

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

HER2012CA

20.0AmpereHeatsinkDualCommonAnodeHighEfficiencyRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

HER2012CL

20.0AmpereHeatsinkDualSeriesConnectionHighEfficiencyRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

詳細參數(shù)

  • 型號：

    F2012

  • 制造商：

    POLYFET

  • 制造商全稱：

    Polyfet RF Devices

  • 功能描述：

    PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
POLYFEI
2019+
SMD
6992
原廠渠道 可含稅出貨
 詢價
POLYFET
23+
1688
房間現(xiàn)貨庫存:QQ:373621633
 詢價
POLYFEI
23+
高頻管
280
專營高頻管模塊,全新原裝!
 詢價
POLYFET
24+
23
詢價
POLYFET
24+
285
現(xiàn)貨供應
 詢價
TI/德州儀器
23+
TO-59
8510
原裝正品代理渠道價格優(yōu)勢
 詢價
TI/德州儀器
2447
TSSOP
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
TI
23+
QFN-16
24546
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術
 詢價
FERRAZ/羅蘭
23+
888
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MPD
2021+
DIP
11000
十年專營原裝現(xiàn)貨,假一賠十
 詢價
更多F2012供應商 更新時間2025-7-26 16:04:00

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