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F1280

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfet?processfeaturesgoldmetalforgreatlyextendedlifetim

F1280

Dual VGA 0.001MHz to 1200MHz; ? 200Ω Differential inputs and 100Ω outputs\n? Dual VVA+VGA with output RMS detectors\n? SPI configurable VGA gain range\n? 24dB gain range for each VVA\n? Switchable dual inputs for VGA2\n? Power-down feature\n? Supply voltage: +4.75V to +5.25V\n? Total supply current: 145mA\n? 5 × 5 mm, 32-VFQFPN package\n? -40°C to +105°C exposed pad operating temperature range\n;

The F1280 is a highly integrated 0.001MHz to 1200MHz dual VVA+VGA with integrated RMS detectors. The two independently controlled VVA+VGAs each provide 24dB of gain range with four different selectable gain ranges. The VGA gain ranges and switchable VGA2 inputs are controlled through an SPI interface with a 10MHz maximum clock operating frequency.

FR1280CT

12AFASTRECOVERYRECTIFIERS

FR1280FCT

12AFASTRECOVERYRECTIFIERS

HCB1280

HCB1280Series