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PFFM101-M

Marking：F1；Package：SOD-123-L；1.0A Surface Mount Fast Recovery Rectifiers -50V - 1000V

YJQ3622A

Marking：F1；Package：DFN3333；N-Channel Enhancement Mode Field Effect Transistor

2SC2223

Marking：F12；Package：SOT-23；NPN-General use transistor

NPN-Generalusetransistor225mW50m20V Qualitylevelandexecutivestandard ◆“G”level QZJ840611Q/FRQZJ123-2007 ◆theⅡlevelofnationalstandard GB4589.1-89GB/T12560-1999Q/FR124-2007 Applications：Canbeusedforswitchingandamplifyingin variousele

AO6601

Marking：F14LU；Package：SOT23-6；N P Channel MOSFET

GeneralDescription TheAO6601usesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsformahigh-speedpower inverter,suitableforamultitudeofapplications. Features N-Ch: VDS(V)=30V RDS(ON)

AO6601

Marking：F14L；Package：SOT23-6；N P Channel MOSFET

Features N-Ch: *VDS(V)=30V *ID=3.4A(VGS=10V) *RDS(ON)60m(VGS=10V) *RDS(ON)70m(VGS=4.5V) *RDS(ON)90m(VGS=2.5V) P-Ch: *VDS(V)=-30V *ID=-2.3A(VGS=-10V) *RDS(ON)115m(VGS=-10V) *RDS(ON)150m(VGS=-4.5V) *RDS(ON)200m(VGS=-2.5V)

DFLS160Q-7

Marking：F17；Package：PowerDI123；1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI123

Features GuardRingDieConstructionforTransientProtection LowPowerLoss,HighEfficiency PatentedInterlockingClipDesignforHighSurgeCurrent Capacity Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101Standardsf

DFLS260Q-7

Marking：F17A；Package：PowerDI123；2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI123

Features ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?PatentedInterlockingClipDesignforHighSurgeCurrentCapacity ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101

DTB113E

Marking：F11；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTB114E

Marking：F14；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTB114EK

Marking：F14；Package：SMT3；-500mA / -50V Digital transistors (with built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninverter circuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcomplete isolationtoallowpositivebiasingoftheinput.Theyalsohave