EV1HMC232ALP4屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由亞德諾半導體技術有限公司制造生產的EV1HMC232ALP4射頻評估和開發(fā)套件，開發(fā)板本系列中的產品適用于在已知實施環(huán)境中，提供能訪問射頻相關器件的功能或者有助于訪問該功能。所含的焦點產品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點產品的適配器硬件，但此類硬件可供方便地訪問用戶單獨提供的特定射頻產品或系列。

FEATURES

Nonreflective 50 Ω design

Low insertion loss

1.5 dB typical to 6 GHz

2.5 dB typical to 12 GHz

High isolation

50 dB typical to 6 GHz

45 dB typical to 12 GHz

High input linearity

P0.1dB: 28 dBm typical at VCTRL = ?5 V

P1dB: 30 dBm typical at VCTRL = ?5 V

IP3: 48 dBm

High power handling

30 dBm insertion loss path 27 dBm hot switching Negative control voltage: ?7 V to ?3 V ESD rating: 250 V (Class 1A) HBM No low frequency spurious 24-lead, 4 mm × 4 mm LFCSP

APPLICATIONS

Test instrumentation

Microwave radios and very small aperture terminals (VSATs)

Military radios, radars, and electronic counter measures (ECMs)

Telecommunication infrastructure

GENERAL DESCRIPTION

The HMC232A is a nonreflective, SPDT, RF switch manufactured in the gallium arsenide (GaAs) process.

The HMC232A operates from 100 MHz to 12 GHz with better than 1.5 dB insertion loss and 50 dB of isolation at 6 GHz and better than 2.5 dB insertion loss and 45 dB of isolation at 12 GHz. The HMC232A has a nonreflective design, and the RF ports are internally terminated to 50 Ω.

The HMC232A switch operates using complementary negative control voltage logic lines of ?7 V to ?3 V and requires no bias supply.

The HMC232A comes in a 24-lead, 4 mm × 4 mm LFCSP and operates from ?40°C to +85°C.