首頁>EN29LV160AB-70BC>規(guī)格書詳情
EN29LV160AB-70BC中文資料16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only數(shù)據(jù)手冊EON規(guī)格書

廠商型號 |
EN29LV160AB-70BC |
功能描述 | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
制造商 | EON Eon Silicon Solution Inc. |
中文名稱 | 宜揚(yáng)科技 宜揚(yáng)科技股份有限公司 |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-9-11 20:00:00 |
人工找貨 | EN29LV160AB-70BC價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
EN29LV160AB-70BC規(guī)格書詳情
描述 Description
GENERAL DESCRIPTION
The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8μs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.FEATURES
? 3.0V, single power supply operation
?? - Minimizes system level power requirements
? High performance
?? - Access times as fast as 70 ns
? Low power consumption (typical values at 5 MHz)
?? - 9 mA typical active read current
?? - 20 mA typical program/erase current
?? - Less than 1 μA standby current
? Flexible Sector Architecture:
?? - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte sectors (byte mode)
?? - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword sectors (word mode)
? Sector protection :
?? - Hardware locking of sectors to prevent program or erase operations within individual sectors
?? - Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
? High performance program/erase speed
?? - Byte/Word program time: 8μs typical
?? - Sector erase time: 500ms typical
?? - Chip erase time: 17.5s typical
? JEDEC Standard program and erase commands
? JEDEC standard DATA# polling and toggle bits feature
? Single Sector and Chip Erase
? Sector Unprotect Mode
? Embedded Erase and Program Algorithms
? Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
? Triple-metal double-poly triple-well CMOS Flash Technology
? Low Vcc write inhibit
特性 Features
? 3.0V, single power supply operation
?? - Minimizes system level power requirements
? High performance
?? - Access times as fast as 70 ns
? Low power consumption (typical values at 5 MHz)
?? - 9 mA typical active read current
?? - 20 mA typical program/erase current
?? - Less than 1 μA standby current
? Flexible Sector Architecture:
?? - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte sectors (byte mode)
?? - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword sectors (word mode)
? Sector protection :
?? - Hardware locking of sectors to prevent program or erase operations within individual sectors
?? - Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
? High performance program/erase speed
?? - Byte/Word program time: 8μs typical
?? - Sector erase time: 500ms typical
?? - Chip erase time: 17.5s typical
? JEDEC Standard program and erase commands
? JEDEC standard DATA# polling and toggle bits feature
? Single Sector and Chip Erase
? Sector Unprotect Mode
? Embedded Erase and Program Algorithms
? Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
? Triple-metal double-poly triple-well CMOS Flash Technology
? Low Vcc write inhibit
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
EON |
24+ |
NA/ |
1056 |
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詢價(jià) | ||
EON |
25+ |
BGA |
1056 |
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詢價(jià) | ||
EON |
24+/25+ |
645 |
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詢價(jià) | |||
24+ |
TSOP |
20000 |
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詢價(jià) | |||
EON |
2016+ |
TSOP48 |
1757 |
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詢價(jià) | ||
EON |
18+ |
BGA |
21629 |
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詢價(jià) | ||
EON |
24+ |
BGA |
27000 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價(jià) | ||
EON |
16+ |
BGA |
1056 |
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詢價(jià) | ||
EON |
22+ |
TSOP48 |
30000 |
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售! |
詢價(jià) | ||
EON |
06+48 |
30 |
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詢價(jià) |