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HAL574SF-E

Two-WireHall-EffectSensorFamily

Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe

MICRONAS

Micronas

HAL574SF-K

Two-WireHall-EffectSensorFamily

Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe

MICRONAS

Micronas

HAL574UA-E

Two-WireHall-EffectSensorFamily

Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe

MICRONAS

Micronas

HAL574UA-K

Two-WireHall-EffectSensorFamily

Introduction Thissensorfamilyconsistsofdifferenttwo-wireHallswitchesproducedinCMOStechnology.Allsensorschangethecurrentconsumptiondependingontheexternalmagneticfieldandrequireonlytwowiresbetweensensorandevaluationcircuit.Thesensorsofthisfamilydifferinthe

MICRONAS

Micronas

HC574

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS

TI1Texas Instruments

德州儀器美國德州儀器公司

HC574A

Octal3-StateNoninvertingDFlip-Flop

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HCT574

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS

TITexas Instruments

德州儀器美國德州儀器公司

HCT574Q

HIGH-SPEEDCOMSLOGICOCTALD-TYPEFLIP-FLOP3-STATE,POSITIVE-EDGERIGGERED

TITexas Instruments

德州儀器美國德州儀器公司

HCTS574D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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