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MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR TheseTMOSPowerFETsaredesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP60N06HD

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06HD

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTP60N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NP60N06MLK

60V??60A??N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06MLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06MLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=8.1m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06PDK

N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
EMC
1716+
TO251
8660
只做原裝進(jìn)口,假一罰十
 詢價(jià)
EMC/杰力
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
EMC/杰力
24+
TO-251
15000
原裝現(xiàn)貨假一賠十
 詢價(jià)
EMC/杰力
23+
TO-251
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
EMC/杰力
24+
NA/
10000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
EMC/杰力
23+
TO-251
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
EMC/杰力
23+
TO-251
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
EMC/杰力
25+
TO-251
5999
原裝正品,假一罰十!
 詢價(jià)
EMC/杰力
24+
TO-251
60000
詢價(jià)
EMC/杰力
25+
TO-251
5999
原裝正品,假一罰十!
 詢價(jià)
更多EMB60N06C供應(yīng)商 更新時(shí)間2025-7-21 15:10:00

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