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首頁(yè)>EM25LV512>規(guī)格書(shū)詳情

EM25LV512中文資料義隆電子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

EM25LV512
廠商型號(hào)

EM25LV512

功能描述

512 K (64K x 8) Bits Serial Flash Memory

文件大小

394.35 Kbytes

頁(yè)面數(shù)量

30 頁(yè)

生產(chǎn)廠商

EMC

中文名稱(chēng)

義隆電子

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-8-25 15:13:00

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EM25LV512規(guī)格書(shū)詳情

General Description

The EM25LV512 is a 512K bits Flash memory organized as 64K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM25LV512 conforms to SPI Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data in, and serial data out) that support high-speed serial data transfers of up to 33MHz.

特性 Features

■ Single Power Supply

? Full voltage range from 2.7 to 3.6 volts for both read and write operations

? Regulated voltage range: 3.0 to 3.6 volts for both read and write operations

■ Small block Erase Capability Block: Uniform 32K bytes

■ Clock Rate

? 33MHz (Maximum)

■ Power Consumption

? Active Current: 4mA (Typical)

? Power-down Mode Standby current: 1μA (Typical)

■ Page Program Features

? Up to 256 Bytes in 2ms (Typical)

■ Erase Features

? Block-Erase Time: 40ms (Typical)

? Chip-Erase Time: 40ms (Typical)

■ Automatic Write Timing

? Internal VPP Generation

■ SPI Bus Compatible Serial Interface

■ High Reliability:

? Endurance cycles: 100K (Typical)

? Data retention: 10 years

■ Package Option

? 8-lead-SO (150 mil)

產(chǎn)品屬性

  • 型號(hào):

    EM25LV512

  • 制造商:

    EMC

  • 制造商全稱(chēng):

    ELAN Microelectronics Corp

  • 功能描述:

    512 K(64K x 8) Bits Serial Flash Memory

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