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ECCA3J120GE

HighVoltageCeramicDiscCapacitors(Lowlosstype)

■Features ●Wideoperatingtemperaturerange:(–25to105°Cor–25to125°C) ●ImprovedVoltagevs.TemperatureRise ●Flame-retardantinsulatedcoating ●Easymountingthroughkinkedleadsandradialtaping ■RecommendedApplications ●Snubbercircuitforswitchingpowersupply ●Horizon

PanasonicPanasonic Semiconductor

松下松下電器

ECCA3J120GE

HighVoltageCeramicDiscCapacitors(Lowlosstype)

■Features ●Wideoperatingtemperaturerange:(–25to105°Cor–25to125°C) ●ImprovedVoltagevs.TemperatureRise ●Flame-retardantinsulatedcoating ●Easymountingthroughkinkedleadsandradialtaping ■RecommendedApplications ●Snubbercircuitforswitchingpowersupply ●Horizon

PanasonicPanasonic Semiconductor

松下松下電器

ECCN3J120GE

HighVoltageCeramicDiscCapacitors(Lowlosstype)

■Features ●Wideoperatingtemperaturerange:(–25to105°Cor–25to125°C) ●ImprovedVoltagevs.TemperatureRise ●Flame-retardantinsulatedcoating ●Easymountingthroughkinkedleadsandradialtaping ■RecommendedApplications ●Snubbercircuitforswitchingpowersupply ●Horizon

PanasonicPanasonic Semiconductor

松下松下電器

SSM3J120TU

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3J120TU

FieldEffectTransistorSiliconPChannelMOSTypePowerManagementSwitchApplicationsHigh-CurrentSwitchingApplications

○PowerManagementSwitchApplications ○High-CurrentSwitchingApplications ?1.5Vdrive ?Lowon-resistance Ron=140m?(max)(@VGS=-1.5V) Ron=78m?(max)(@VGS=-1.8V) Ron=49m?(max

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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