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首頁 >EBLS2012-2R2K>規(guī)格書列表

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ASPI-2012-2R2

WireWoundMagneticallyShieldedSMDPowerInductor

ABRACON

Abracon Corporation

EFL2012-2R2

MULTILAYERCHIPINDUCTORS

ECEEXCEL CELL ELECTRONIC CO., LTD.

百容電子百容電子股份有限公司

PIE2012-2R2M

POWERINDUCTOR

●FEATURE 1.MultilayerChipPowerInductor 2.Monolithicstructureforhighreliability 3.Excellentsolderabilityandhighheatresistance 4.Nocrosscouplingduetomagneticshield 5.HighDCbiascurrentduetodevelopedmaterial 6.LowDCresistance 7.OperatingTemp.:-40°C~+125°C

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

SRN2012-2R2M

SRN2012Series-Semi-shieldedPowerInductors

Features Semi-shieldedconstruction Miniaturesize Lowprofile:1.2mm Inductancerange:0.24to2.2μH Ratedcurrentupto3.5A RoHScompliant*andhalogenfree** Applications DC/DCconverters Notebookcomputers Digitalvideocameras HDDs Cellphones Televisions,LCDdisplays

BournsBourns Electronic Solutions

伯恩斯

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