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IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1310NL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NLPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NPBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRF1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF1310NS

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號品牌批號封裝庫存備注價格
HY
2022+
0402
10000
原廠代理 終端免費(fèi)提供樣品
 詢價
HY
23+
0402
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HY
23+
6800
402
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
24+
N/A
62000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
HY
10+
0402-1.8UH
10000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
宏業(yè)
2016+
SMD
1959
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
HY
25+23+
0603
63414
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
HY
24+
0603
1981
全新原裝數(shù)量均有多電話咨詢
 詢價
MAXECHO
23+
INDUCTOR
111000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
MAXECHO
25+
INDUCTOR
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
更多EBLP1310MXG-D供應(yīng)商 更新時間2025-7-22 14:02:00

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