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E6D16065D1中文資料WOLFSPEED數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
E6D16065D1 |
| 功能描述 | E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode |
| 絲印標(biāo)識(shí) | |
| 封裝外殼 | TO-247-3 |
| 文件大小 |
572.83 Kbytes |
| 頁(yè)面數(shù)量 |
9 頁(yè) |
| 生產(chǎn)廠商 | WOLFSPEED, INC. |
| 企業(yè)簡(jiǎn)稱 |
WOLFSPEED |
| 中文名稱 | WOLFSPEED, INC.官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-2 16:06:00 |
| 人工找貨 | E6D16065D1價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
E6D16065D1規(guī)格書詳情
描述 Description
With the performance advantages of a Silicon Carbide (SiC)
Schottky Barrier diode, power electronics systems can expect
to meet higher efficiency standards than Si-based solutions,
while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application
demands, without concern of thermal runaway. In combination
with the reduced cooling requirements and improved thermal
performance of SiC products, SiC diodes are able to provide
lower overall system costs in a variety of diverse applications.
特性 Features
? Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
? Zero Reverse Recovery Current / Forward Recovery
Voltage
? Temperature-Independent Switching Behavior
? Automotive Qualified (AEC Q101) and PPAP Capable
Typical Applications
? Interleaved or Bridgless PFC
? DC/DC On Board Battery Chargers
? Boost for PFC & DC-DC Stages
? AC/DC On Board Chargers
? PFC Output Rectification
