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E4D20120D

Marking：E4D20120；Package：TO-247-3；Silicon Carbide Schottky Diode E-Series Automotive

Features ?4thGenerationSiCMergedPINSchottkyTechnology ?ZeroReverseRecoveryCurrent ?High-FrequencyOperation ?Temperature-IndependentSwitchingBehavior ?AEC-Q101QualifiedandPPAPCapable ?HumidityResistant Benefits ?ReplaceBipolarwithUnipolarRectifiers ?Essentially

E4M0013120K

Marking：E4M0013120K；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?E4MgenerationSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?8mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery

E4M0015075J2

Marking：E4M0015075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?750VSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?4.7mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr)

E4M0025075J2

Marking：E4M0025075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?750VSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?4.7mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr)

E4M0025075K1

Marking：E4M0025075K1；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?Optimizedpackagewithseparatedriversourcepin ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr) ?Halogenfree,RoHScompliant ?AutomotiveQualified(AEC-Q101)andPPAPCapable

E4M0045075J2

Marking：E4M0045075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?750VSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?4.7mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr)

E4M0045075K1

Marking：E4M0045075K1；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?Optimizedpackagewithseparatedriversourcepin ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr) ?Halogenfree,RoHScompliant ?AutomotiveQualified(AEC-Q101)andPPAPCapable

E4M0060075J2

Marking：E4M0060075J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?750VSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?4.7mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr)

E4M0060075K1

Marking：E4M0060075K1；Package：TO-247-4L；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?Optimizedpackagewithseparatedriversourcepin ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(Qrr) ?Halogenfree,RoHScompliant ?AutomotiveQualified(AEC-Q101)andPPAPCapable

IDWD40E120D7

Marking：E40MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features ?VRRM=1200V ?IF=40A ?1200Vemittercontrolledtechnology ?MaximumjunctiontemperatureTvjmax=175°C ?Lowforwardvoltage(VF) ?Lowreverserecoverycharge ?Ultrafastrecoverytimes ?Softrecoverycharacteristics ?Pb-freeleadplating;RoHScompliant ?Humidity