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E3M0032120J2

絲?。?strong>E3M0032120J2；Package：TO-263-7XL；Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Features ?3rdgenerationSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?4.7mmofcreepagedistancebetweendrainandsource ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecove

E3M0032120J2

Discrete Silicon Carbide Schottky Diodes; .css-1d32f0i h1{font-size:4.4rem;font-weight:700;line-height:1.2;margin-bottom:0.425em;}@media (min-width: 768px){.css-1d32f0i h1{font-size:5.4rem;}}.css-1d32f0i h2{font-size:3.6rem;font-weight:700;line-height:1.2;margin-bottom:0.475em;}@media (min-width: 768px){.css-1d32f0i h2{font-size:4rem;}}.css-1d32f0i h3{font-size:2.7rem;line-height:1.2;margin-bottom:0.633em;font-weight:600;}@media (min-width: 768px){.css-1d32f0i h3{font-size:3rem;}}.css-1d32f0i h4{font-size:1.8rem;font-weight:400;line-height:1.2;margin-bottom:0.85em;font-weight:600;}@media (min-width: 768px){.css-1d32f0i h4{font-size:2rem;}}.css-1d32f0i h5{font-size:1.8rem;font-weight:700;line-height:1.2;margin-bottom:0.85em;}@media (min-width: 768px){.css-1d32f0i h5{font-size:2rem;}}.css-1d32f0i a:not(.inlineIconLink){-webkit-transition:color 200ms ease-in-out 0ms;transition:color 200ms ease-in-out 0ms;color:#58238C;-webkit-text-decoration:underline;text-decoration:underline;}.css-1d32f0i a:not(.inlineIconLink):hover,.css-1d32f0i a:not(.inlineIconLink):focus{color:#0081A1;}.css-1d32f0i ul:not(.unstyled-list){margin-bottom:30px;margin-left:1em;}.css-1d32f0i ul:not(.unstyled-list) li{padding-left:1em;position:relative;}.css-1d32f0i ul:not(.unstyled-list) li:not(:last-of-type){margin-bottom:5px;}.css-1d32f0i ul:not(.unstyled-list) li::before{content:\"?\";position:absolute;left:0;top:0;}.css-1d32f0i ul:not(.unstyled-list) a{word-break:break-word;}.css-1d32f0i ul:not(.unstyled-list).no-indent{margin-left:0;}.css-1d32f0i ol{list-style:decimal;margin-bottom:30px;padding-left:1em;}.css-1d32f0i ol a{word-break:break-word;}.css-1d32f0i blockquote{margin-bottom:40px;color:#0081A1;}.css-1d32f0i blockquote p{font-size:3.6rem;font-weight:700;line-height:1.2;margin-bottom:0.475em;margin-bottom:0;}@media (min-width: 768px){.css-1d32f0i blockquote p{font-size:4rem;}}.css-1d32f0i hr{display:block;border:0;border-top:1px solid #E3E3E3;margin-top:60px;margin-bottom:60px;}? Automotive Qualified (AEC-Q101) and PPAP capable\n? High breakdown voltage across entire operating temperature range\n? High-speed switching with low output capacitance\n? High blocking voltage with low RDS(on)\n? Fast intrinsic diode with low reverse recovery (Qrr)\n;

Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of Silicon Carbide (SiC) MOSFETs, automotive qualified, PPAP capable and humidity resistant MOSFET. It features Wolfspeed’s 3rd generation rugged technology, offering the industry’s lowest switching losses and highest figure of merit. The E-Series MOSFET is optimized for use in EV battery chargers and high voltage DC/DC converters and is featured in Wolfspeed’s 22kW Bi-Directional High Efficiency DC/DC Converter Reference Design.

C3M0032120J2

SiliconCarbidePowerMOSFETN-ChannelEnhancementMode

Features ?3rdgenerationSiCMOSFETtechnology ?Optimizedpackagewithseparatedriversourcepin ?Largerdraintabforbetterthermalperformance ?Highblockingvoltagewithlowon-resistance ?High-speedswitchingwithlowcapacitances ?Fastintrinsicdiodewithlowreverserecovery(

E5-2680V22.8G

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