描述 Description

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.?Flash Electrical Chip-Erase
? 1 Second Typical Chip-Erase
?Quick-Pulse Programming Algorithm
? 10 μs Typical Byte-Program
? 2 Second Chip-Program
?100,000 Erase/Program Cycles
?12.0 V ±5% VPP
?High-Performance Read
? 90 ns Maximum Access Time
?CMOS Low Power Consumption
? 10 mA Typical Active Current
? 50 μA Typical Standby Current
? 0 Watts Data Retention Power
?Integrated Program/Erase Stop Timer
?Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
?Noise Immunity

特性 Features

? ±10% VCC Tolerance
? Maximum Latch-Up Immunity through EPI Processing
?ETOX? Nonvolatile Flash Technology
? EPROM-Compatible Process Base
? High-Volume Manufacturing Experience
?JEDEC-Standard Pinouts
? 32-Pin Plastic Dip
? 32-Lead PLCC
? 32-Lead TSOP
?? (See Packaging Spec., Order #231369)
?Extended Temperature Options?