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RFP40N10

N-Channel100-V(D-S)MOSFET

RFP40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

RFP40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

RFP40N10LE

N-Channel100-V(D-S)MOSFET

RFP40N10LE

40A,100V,0.040Ohm,LogicLevelN-ChannelPowerMOSFETs

SMP40N10

N-ChannelEnhancement-ModeTransistor

N-ChannelEnhancement-ModeTransistor

SSD40N10J

N-ChEnhancementModePowerMOSFET

STD40N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

STP40N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRos(on)=0.0352 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SO

STP40N10FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

■TYPICALRos(on)=0.0352 ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SO