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HVC133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVC133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVD133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVL133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Feature ?Anoptimalsolutionforantennaswitchinginmobilephones. ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?ExtremelysmallFlatLeadPackage(EFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVL133A

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU133

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallResinPackage(URP)issuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi Semiconductor

日立日立公司

HVU133

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C1=1.0pFmax) ?Lowforwardresistance.(rf=0.7?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    DTB133HS

  • 制造商：

    ROHM

  • 制造商全稱：

    Rohm

  • 功能描述：

    Digital transistors(built-in resistors)

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RHM
05+
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1651
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23+
TO-92L
10000
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SOT-323
50000
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UTC/友順
24+
SOT-323
50000
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ROHM
24+
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15200
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ROHM
23+
SOT-23
31000
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ETL
23+
NA
39960
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SOT-23
23+
NA
15659
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1844+
SOT-23
9852
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21+
SOT-23
21000
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更多DTB133HS供應商 更新時間2025-7-23 15:44:00

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