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DS1258Y-100-IND中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書
DS1258Y-100-IND規(guī)格書詳情
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
FEATURES
10-Year Minimum Data Retention in the Absence of External Power
Data is Automatically Protected During a Power Loss
Separate Upper Byte and Lower Byte Chip Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
Full 10 Operating Range (DS1258Y)
Optional 5 Operating Range (DS1258AB)
Optional Industrial Temperature Range of -40C to +85C, Designated IND
產(chǎn)品屬性
- 型號:
DS1258Y-100-IND
- 制造商:
DALLAS
- 制造商全稱:
Dallas Semiconductor
- 功能描述:
128k x 16 Nonvolatile SRAM
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DALLAS |
24+ |
DIP |
428 |
詢價(jià) | |||
Maxim |
22+ |
40EDIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
NS |
22+ |
DIP |
920 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價(jià) | ||
DALLAS |
25+ |
DIP16 |
877 |
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙ |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Maxim Integrated |
24+ |
40-EDIP |
56200 |
一級代理/放心采購 |
詢價(jià) | ||
DALLAS |
23+ |
NA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
DALLAS |
25+ |
DIP |
58788 |
百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià) |
詢價(jià) | ||
Maxim Integrated |
23+ |
40-EDIP |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
DALLAS |
23+ |
DIP |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) |