訂購數(shù)量 | 價(jià)格 |
---|---|
1+ |
首頁>DS1230Y-200IND>詳情
DS1230Y-200IND_DALLAS/亞德諾_NVRAM 256k Nonvolatile SRAM一線半導(dǎo)體
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
DS1230Y-200IND
- 功能描述:
NVRAM 256k Nonvolatile SRAM
- RoHS:
否
- 制造商:
Maxim Integrated
- 數(shù)據(jù)總線寬度:
8 bit
- 存儲(chǔ)容量:
1024 Kbit
- 組織:
128 K x 8
- 接口類型:
Parallel
- 訪問時(shí)間:
70 ns
- 電源電壓-最大:
5.5 V
- 電源電壓-最?。?/span>
4.5 V
- 工作電流:
85 mA
- 最大工作溫度:
+ 70 C
- 最小工作溫度:
0 C
- 封裝/箱體:
EDIP
- 封裝:
Tube
供應(yīng)商
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