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首頁 >DS1230Q>規(guī)格書列表

零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
DS1230W	文件：214.24 Kbytes Page：11 Pages	3.3V256kNonvolatileSRAM DESCRIPTION TheDS1230W3.3V256kNonvolatileSRAMisa262,144-bit,fullystatic,nonvolatileSRAMorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitry,whichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacond	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DS1230W	文件：527.46 Kbytes Page：11 Pages	3.3V256KNonvolatileSRAM	ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED.	ARTSCHIP
DS1230W	文件：202.92 Kbytes Page：10 Pages	3.3V256kNonvolatileSRAM	MaximMaxim Integrated Products 美信美信半導(dǎo)體	Maxim
DS1230Y	文件：213.86 Kbytes Page：12 Pages	256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DS1230Y	文件：222.21 Kbytes Page：10 Pages	256kNonvolatileSRAM	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DS1230Y	文件：222.21 Kbytes Page：10 Pages	256kNonvolatileSRAM	MaximMaxim Integrated Products 美信美信半導(dǎo)體	Maxim
DS1230Y/AB	文件：213.86 Kbytes Page：12 Pages	256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DS1230Y-AB	文件：213.86 Kbytes Page：12 Pages	256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DS1230YSLASHAB	文件：213.86 Kbytes Page：12 Pages	256kNonvolatileSRAM DESCRIPTION TheDS1230256kNonvolatileSRAMsare262,144-bit,fullystatic,nonvolatileSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditio	DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體	Dallas
DU1230S	文件：195.34 Kbytes Page：3 Pages	RFMOSFETPowerTransistor,30W,12V,2-175MHz Features ?N-ChannelEnhancementModeDevice ?DMOSStructure ?LowerCapacitancesforBroadbandOperation ?HighSaturatedOutputPower ?LowerNoiseFigureThanBipolarDevices ?SpecificallyDesignedfor12VoltApplications	MACOMTyco Electronics 瑪科姆技術(shù)方案控股有限公司	MACOM

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