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首頁(yè)>DRV3245Q-Q1>規(guī)格書(shū)詳情

DRV3245Q-Q1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DRV3245Q-Q1
廠商型號(hào)

DRV3245Q-Q1

功能描述

DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics

文件大小

1.18689 Mbytes

頁(yè)面數(shù)量

17 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱(chēng)

TI德州儀器

中文名稱(chēng)

美國(guó)德州儀器公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-16 8:20:00

人工找貨

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DRV3245Q-Q1規(guī)格書(shū)詳情

1 Features

? AEC-Q100 qualified for automotive applications:

– Device temperature grade 1:

–40°C to +125°C, TA

? SafeTI?semiconductor component

– Developed according to the applicable

requirements of ISO 26262

? 4.5-V to 45-V operating voltage

? Programmable peak gate drive currents up to 1A

? Charge-pump gate driver for 100 Duty Cycle

? Current-shunt amplifiers and phase comparators

– A / C Device: 3 current-shunt amplifiers(1) and

3-phase comparators with status through SPI 1

– B Device: 2 current-shunt amplifiers and 3-

phase comparators with real-time monitor

through digital pins

– S Device: 3 current-shunt amplifiers

? 3-PWM or 6-PWM input control up to 20 kHz

? Single PWM-mode commutation capability

? Supports both 3.3-V and 5-V digital interface

? Serial peripheral interface (SPI)

? Thermally-enhanced 48-Pin HTQFP

? Protection features:

– Internal regulators, battery voltage monitor

– SPI CRC

– Clock monitor

– Analog built-in self test

– Programmable dead-time control

– MOSFET shoot-through prevention

– MOSFET VDS overcurrent monitors

– Gate-source voltage real time monitor

– Overtemperature warning and Shutdown

2 Applications

? 12-V automotive motor-control applications

– Electrical power steering (EPS, EHPS)

– Electrical brake and brake assist

– Transmissions and pumps

3 Description

The DRV3245Q-Q1 device is a FET gate driver

IC for three-phase motor-drive applications designed

according to the applicable requirements of ISO

26262 for functional safety applications. The device

provides three half-bridge drivers each capable

of driving a high-side and low-side N-channel

MOSFET while also providing sophisticated protection

and monitoring of the FETs. A charge-pump

driver enables 100 duty cycle and supports low

battery voltages during cold-crank operation. The

integration of current-sense amplifiers, integrated

phase comparators, and SPI-based configuration of

the driver and its peripherals enable reduction of the

bill of materials (BOM) and space on the printed

circuit board (PCB) because of the elimination of most

external and passive components.

The DRV3245Q-Q1 device also integrates diagnostics

and protection for each internal block and provides

support for common system diagnostic checks each

of which can be instantiated and reported through

SPI. This flexibility of the integrated features allows

the device to integrate seamlessly into a variety of

safety architectures.

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23+
QFN
98900
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詢(xún)價(jià)
TI(德州儀器)
24+
HTQFP64
7350
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2013
QFN
10000
全新
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23+
NA
19960
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24+
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12000
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25+
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明嘉萊只做原裝正品現(xiàn)貨
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TI/德州儀器
25+
原廠封裝
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22+
5000
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24+
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9000
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