FEATURES

? Ultra-fine Trench Gate IGBT

? Cu Base with Enhanced Al2O3 Substrates

? High Thermal Cycling capacity

? Low VCE(sat) Device

? Low Switching Losses

APPLICATIONS

? Motor Drives

? High Power Converters

? Wind Turbines

? High Reliability Inverters

The Powerline range of high power modules includes

half bridge, chopper, dual, single and bi-directional

switch configurations covering voltages from 1200V to

6500V and currents up to 2400A.

The DIM1800H1HS17-PH500 is a Half Bridge 1700V,

trench gate, insulated gate bipolar transistor (IGBT)

module with enhanced field stop and implantation

technology. The IGBT has a wide reverse bias safe

operating area (RBSOA) plus 10μs short circuit

withstand. This device is optimised for traction drives

and other applications requiring high thermal cycling

capability.

The module incorporates an electrically isolated base

plate and low inductance construction enabling circuit

designers to optimise circuit layouts and utilise

grounded heat sinks for safety.

ORDERING INFORMATION

Order As:

DIM1800H1HS17-PH500