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DGD2136

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features ThreeFloatingHigh-SideDriversinBootstrapOperationto600V 200mASource/350mASinkOutputCurrentCapability OutputsToleranttoNegativeTransients,dV/dtImmune LogicInput3.3VCapability InternalDeadtimeof290nstoProtectMOSFETs MatchedPropDelayforAllChannels Ou

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28; Three floating high-side drivers in bootstrap operation to 600V\n200mA source / 350mA sink output current capability\nOutputs tolerant to negative transients, dV/dt immune\nLogic input 3.3V capability\nInternal deadtime of 290ns to protect MOSFETs\nMatched prop delay for all channels\nOutputs out of phase with inputs\nSchmitt triggered logic inputs\nCross conduction prevention logic\nUndervoltage lockout for all channels\nOvercurrent protection shuts down drivers\nExtended temperature range: -40°C to +125°C;

The DGD2136 is a three-phase gate driver IC designed for high-voltage / high-speed applications, driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High-voltage processing techniques enable the DGD2136’s high-side to switch to 600V in a bootstrap operation.The DGD2136 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices and are enabled low to better function in high noise environments. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction.The DGD2136 offers numerous protection functions. A shoot-through protection logic prevents both outputs from being high when both inputs are high (fault state), an undervoltage lockout for VCC shuts down the respective high side output. An overcurrent protection will terminate the six outputs. Both the VCC UVLO and the overcurrent protection trip an automatic fault clear with a timing that is adjustable with an external capacitor.The DGD2136 is offered in SO-28 (Type TH) package and the operating temperature extends from -40°C to +125°C.

DiodesDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136M

3-PHASE HALF-BRIDGE GATE DRIVER IN SO28; ?Three Floating High-Side Drivers in Bootstrap Operation to?600V\n?200mA Source / 350mA Sink Output Current Capability\n?Outputs Tolerant to Negative Transients, dV/dt Immune\n?Logic Input 3.3V Capability\n?Internal Deadtime of 290ns to Protect MOSFETs and IGBTs\n?Matched Prop Delay for All Channels\n?Outputs Out of Phase with Inputs\n?Schmitt Triggered Logic Inputs\n?Cross Conduction Prevention Logic\n?Undervoltage Lockout for All Channels\n?Overcurrent Protection Shuts Down Drivers\n?Extended Temperature Range: -40°C to +125°C\n;

The DGD2136M is a three-phase gate driver IC designed for highvoltage?/ high-speed applications, driving N-Channel MOSFETs and?IGBTs in a half-bridge configuration. High-voltage processing?techniques enable the DGD2136M’s high-side to switch to 600V in a?bootstrap operation.The DGD2136M logic inputs are compatible with standard TTL and?CMOS levels (down to 3.3V) for easy interfacing with controlling?devices and are enabled low to better function in high noise?environments. The driver outputs feature high-pulse current buffers?designed for minimum driver cross conduction.The DGD2136M offers numerous protection functions. A shootthrough?protection logic prevents both outputs from being high when?both inputs are high (fault state), an undervoltage lockout for VCC?shuts down the respective high-side output. An overcurrent protection?will terminate the six outputs. Both the VCC UVLO and the?overcurrent protection trip an automatic fault clear with a timing that is?adjustable with an external capacitor.The DGD2136M is offered in SO-28 package and the operating?temperature extends from -40°C to +125°C.

DiodesDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136M

3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features -ThreeFloatingHigh-SideDriversinBootstrapOperationto600V -200mASource/350mASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients,dV/dtImmune -LogicInput3.3VCapability -InternalDeadtimeof290nstoProtectMOSFETsandIGBTs -MatchedPropDela

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136MS28-13

絲?。?a target="_blank" title="Marking" href="/dgd2136m/marking.html">DGD2136M;Package:SO-28;3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features -ThreeFloatingHigh-SideDriversinBootstrapOperationto600V -200mASource/350mASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients,dV/dtImmune -LogicInput3.3VCapability -InternalDeadtimeof290nstoProtectMOSFETsandIGBTs -MatchedPropDela

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136S28-13

絲印:DGD2136;Package:SO-28;3-PHASE HALF-BRIDGE GATE DRIVER IN SO-28

Features ThreeFloatingHigh-SideDriversinBootstrapOperationto600V 200mASource/350mASinkOutputCurrentCapability OutputsToleranttoNegativeTransients,dV/dtImmune LogicInput3.3VCapability InternalDeadtimeof290nstoProtectMOSFETs MatchedPropDelayforAllChannels Ou

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

DGD2136MS28-13

Package:28-SOIC(0.295",7.50mm 寬);包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:集成電路(IC) 柵極驅(qū)動(dòng)器 描述:IC GATE DRVR HALF-BRIDGE 28SO

PAMDiodes Incorporated

龍鼎微龍鼎微電子(上海)有限公司

DGD2136S28-13

Package:28-SOIC(0.295",7.50mm 寬);包裝:卷帶(TR) 類別:集成電路(IC) 柵極驅(qū)動(dòng)器 描述:IC GATE DRVR HALF-BRIDGE 28SO

PAMDiodes Incorporated

龍鼎微龍鼎微電子(上海)有限公司

技術(shù)參數(shù)

  • Inputs:

    HIN(OutofPhase)

  • OutputCurrentIO+(Typ):

    200

  • OutputCurrentIO-(Typ):

    350

  • InternalDeadtime(Typ):

    290

  • tON(Typ):

    330

  • tOFF(Typ):

    330

  • tR(Typ):

    90

  • tF(Typ):

    35

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更多DGD2136供應(yīng)商 更新時(shí)間2025-7-29 16:32:00